N-Channel Depletion-Mode MOSFETs Series -

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Depletion Mode MOSFET Devices

Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process which realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid-state relays for industrial and telecommunications applications.

Features & Benefits:

  • Normally closed with no power applied
  • Low VGS(off) voltage
  • High input impedance

Access specifications, certifications, check availability and order parts below

Catalog #BVDSX (V)RDS(on) (Ω)VGS(off)_min (V)VGS(off)_max (V)IDSS_min (mA)Package TypePart DatasheetPartner ECAD ModelsStockSamplesCompare
CPC370835014-2-3.6130SOT-89 SOT-223PartCPC3708CheckOrder
CPC39094006-1.4-3.1300SOT-89 SOT-223PartCPC3909CheckOrder
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